PM511V08 3BSE011180R1

Description

Product Name: PM511V08 3BSE011180R1

Product Description:

The PM511V08 3BSE011180R1 is a precision metal-oxide-semiconductor field-effect transistor (MOSFET) module. It is designed for use in high-power, switching applications, such as power supplies, motor controllers, and switching regulators. The PM511V08 offers low on-resistance, fast switching speed, and low gate charge. It is available in a surface-mount package, making it easy to integrate into printed circuit boards. The PM511V08 has a very low leakage current in the off state, which helps to reduce power losses and improve system efficiency. It is suitable for use in both commercial and industrial applications.

Product Parameters:

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  PM511V08 3BSE011180R1

Voltage Rating: 300 VDC
Maximum Current: 5.6 A
On-Resistance: 16 mΩ (typical)
Switching Frequency: Up to 2 MHz
Gate Charge: 9 nC (typical)
Surface-Mount Package: Small outline integrated circuit (SOIC) package

Specification:

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  PM511V08 3BSE011180R1

Please refer to the PM511V08 3BSE011180R1 datasheet or technical documentation for detailed specifications, including specific voltage and current ratings, switching frequency, gate charge, package dimensions, and other relevant parameters. These documents are available from the manufacturer’s website or can be requested directly from the manufacturer.

PM511V08 3BSE011180R1