531X307LTBAJG1

Description

Product Name: 531X307LTBAJG1

Product Description: The 531X307LTBAJG1 is a low-temperature, high-voltage power MOSFET transistor. It is designed for use in harsh environments, such as automotive and industrial applications, where high temperatures and voltages are common.

Product Parameters:

RDS(ON) @ VGS = 10 V: ≤ 16 mohm
VGS threshold voltage: ≤ 2.5 V
Breakdown voltage: ≥ 600 V
Operating temperature: -55°C to +175°C
Package: TO-247 package

Specification:

The 531X307LTBAJG1 is rated for operation at low temperatures and high voltages.
It features low on-resistance and fast switching capabilities, making it suitable for high-power applications.
The MOSFET is packaged in a robust TO-247 package, providing a stable and reliable connection to the circuit.
It is suitable for use in automotive electronic control units (ECUs) and other high-power applications where high temperatures and voltages are encountered.